3
www.fairchildsemi.com
FFB20UP30DN
Ultrafast
Dual
Diode
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop
Figure
4. Typical Reverse
Current
Figure 5.
Typical Junction
Capacitance
Figure
6.
Typical Reverse
Recovery Time
Figure
7
. Typical Reverse Recovery
Current
Figure 8. Forward
Current
Deration
C
urve
0.1
0.0
1
10
20
0.5
1.0
1.5
2.0
TC
= 25
oC
TC
= 100
oC
Forward Voltage , VF
[V]
Forward Current , I
F
[A]
0 50 100 150 200 250 300
0.001
0.01
0.1
1
10
TC
= 25
oC
TC
= 100
oC
Reverse Current , I
R
[
μ
A]
Reverse Voltage , VR
[V]
0.1
1
10
100
10
100
400
Typical Capacitance
at 0V = 197. 2 pF
Capacitance , Cj [pF]
Reverse Voltage , VR
[V]
100
200
300 400 500
24
28
32
36
IF
= 10A
Tc = 25oC
Revers
e
Recovery
T
ime
,
T
rr
[ns]
diF/dt [A/μs]
100
200
300 400 500
0
1
2
3
4
5
IF
= 10A
TC
= 25
oC
Reverse Recovery Current , I
rr
[A]
diF/dt [A/μs]
100 110 120 130 140 150
0
2
4
6
8
10
12
14
Average Rectified Forward Current, I
F(AV)
[A]
Case Temperature, TC
[
oC]
DC
?2006 Fairchild Semiconductor
Cor
poration
FFB20UP30DN Rev.C1
相关PDF资料
FFH30US30DN DIODE DUAL 300V TO-247
FFP20UP20DNTU DIODE PWR ULT FAST 200V TO-220
FFP30U60DNTU DIODE ULT FAST 600V 30A TO-220
FFPF12UP20DNTU DIODE PWR ULT FAST 200V TO-220F
FFPF20UA60DN DIODE 600V 10A TO-220FP
FFPF20UP20DNTU DIODE ULTRA FAST 200V TO-220F
FFPF20UP30DNTU DIODE PWR ULT FAST 300V TO-220F
FFPF20UP60DNTU_G DIODE 600V 10A TO-220FP
相关代理商/技术参数
FFB20UP30DNTPTM 功能描述:整流器 Ultrafast Rcvry Pwr Rectifier RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
FFB2222A 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
FFB2222A_1 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Multi-Chip General Purpose Amplifier
FFB2227A 功能描述:两极晶体管 - BJT NPN & PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
FFB2227A_Q 功能描述:两极晶体管 - BJT NPN & PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
FFB24A0117K-- 制造商:AVX 制造商全称:AVX Corporation 功能描述:Medium Power Film Capacitors
FFB24A0117KJC 制造商:AVX 制造商全称:AVX Corporation 功能描述:Medium Power Film Capacitors
FFB24A0336K-- 制造商:AVX 制造商全称:AVX Corporation 功能描述:Medium Power Film Capacitors